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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-265145
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.26514
Alternative Links zum Volltext:DOI
Zusammenfassung
The band structure of MoS2 strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS2. Single-layer MoS2 therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence ...
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