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Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

Gray, A. X. ; Minar, Jan ; Ueda, S. ; Stone, P. P. ; Yamashita, Y. ; Fujii, J. ; Braun, J. ; Plucinski, L. ; Schneider, C. M. ; Pannaccione, G. ; Ebert, Hubert ; Dubon, O. D. ; Kobayashi, K. ; Fadley, C. S.


A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga0:97Mn0:03As, and the reference undoped GaAs. The data are compared to theory based on the ...


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