| PDF - Veröffentlichte Version (1MB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-277334
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.27733
Zusammenfassung
We present results of nonlocal and three-terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 ∘C for 15 minutes in vacuum. The values of spin relaxation length Ls and spin relaxation time τs obtained after annealing are reduced by a factor 2 and 4, respectively, ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik