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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-277334
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.27733
Zusammenfassung
We present results of nonlocal and three-terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees C for 15 minutes in vacuum. The values of spin relaxation length L-s and spin relaxation time tau(s) obtained after annealing are reduced by a factor 2 and 4, ...
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