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Electrostatically defined quantum dots in a Si/SiGe heterostructure

Wild, A., Sailer, J., Nützel, J., Abstreiter, G., Ludwig, S. and Bougeard, Dominique (2010) Electrostatically defined quantum dots in a Si/SiGe heterostructure. New J. Phys. 12, p. 113019.

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Date of publication of this fulltext: 27 Feb 2013 14:03

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Abstract

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxially grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific to silicon-based heterostructures and the effect of a comparably large effective electron mass ...

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Item type:Article
Date:2010
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1088/1367-2630/12/11DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:27767
Owner only: item control page

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