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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-277675
- DOI to cite this document:
- 10.5283/epub.27767
Alternative links to fulltext:DOI
Abstract
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxially grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific to silicon-based heterostructures and the effect of a comparably large effective electron mass ...

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