Wild, A., Sailer, J., Nützel, J., Abstreiter, G., Ludwig, S. and Bougeard, Dominique (2010) Electrostatically defined quantum dots in a Si/SiGe heterostructure. New J. Phys. 12, p. 113019.
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Abstract
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxially grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific to silicon-based heterostructures and the effect of a comparably large effective electron mass ...
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | 2010 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number: |
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Partially | ||||
| Item ID: | 27767 |
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