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Electrostatically defined quantum dots in a Si/SiGe heterostructure

URN to cite this document:
urn:nbn:de:bvb:355-epub-277675
DOI to cite this document:
10.5283/epub.27767
Wild, A. ; Sailer, J. ; Nützel, J. ; Abstreiter, G. ; Ludwig, S. ; Bougeard, Dominique
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Date of publication of this fulltext: 27 Feb 2013 14:03


Abstract

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxially grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific to silicon-based heterostructures and the effect of a comparably large effective electron mass ...

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