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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-277717
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.27771
Alternative Links zum Volltext:DOI
Zusammenfassung
We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small band gap. Anomalous Hall measurements and large magnetoresistance effects are completely understood by taking a dominating ...
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