| PDF - Veröffentlichte Version (358kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-277920
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.27792
Alternative Links zum Volltext:DOI
Zusammenfassung
We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik