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Intraband photoresponse of SiGe quantum dot/quantum well multilayers

Bougeard, Dominique, Brunner, K. and Abstreiter, Gerhard (2003) Intraband photoresponse of SiGe quantum dot/quantum well multilayers. Physica E 16, p. 609.

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Abstract

In this contribution we study the intravalence band photoexcitation of holes from self-assembled Ge quantum dots (QDs) in Si followed by spatial carrier transfer into SiGe quantum well (QW) channels located close to the Ge dot layers. The structures show maximum response in the important wavelength range 3-5 mum. The influence of the SiGe hole channel on photo- and dark current is studied ...

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Item type:Article
Date:2003
Additional Information (public):Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1016/S1386-9477(02)00640-9DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Item ID:27794
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