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Intraband photoresponse of SiGe quantum dot/quantum well multilayers

Bougeard, Dominique ; Brunner, K. ; Abstreiter, Gerhard



Abstract

In this contribution we study the intravalence band photoexcitation of holes from self-assembled Ge quantum dots (QDs) in Si followed by spatial carrier transfer into SiGe quantum well (QW) channels located close to the Ge dot layers. The structures show maximum response in the important wavelength range 3-5 mum. The influence of the SiGe hole channel on photo- and dark current is studied ...

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