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A quantum dot infrared photodetector with lateral carrier transport

Chu, L. ; Zrenner, A. ; Bougeard, Dominique ; Bichler, M. ; Abstreiter, Gerhard



Abstract

In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 mum (186 meV) and reaches several A/W up to 60 K. The intrinsic ...

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