Alternative Links zum Volltext:DOI
Zusammenfassung
In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 mum (186 meV) and reaches several A/W up to 60 K. The intrinsic ...
![plus plus](/style/images/plus.png)
Nur für Besitzer und Autoren: Kontrollseite des Eintrags