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A quantum dot infrared photodetector with lateral carrier transport

Chu, L., Zrenner, A., Bougeard, Dominique, Bichler, M. and Abstreiter, Gerhard (2002) A quantum dot infrared photodetector with lateral carrier transport. Physica E 13, p. 301.

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Abstract

In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 mum (186 meV) and reaches several A/W up to 60 K. The intrinsic ...

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Item type:Article
Date:2002
Additional Information (public):10th International Conference on Modulated Semiconductor Structures, LINZ, AUSTRIA, JUL 23-27, 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1016/S1386-9477(01)00543-4DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:27796
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