Chernichkin, V. I. ; Dobrovolsky, A. A. ; Dashevsky, Z. M. ; Kasiyan, V. A. ; Bel'kov, V. V. ; Ganichev, Sergey ; Danilov, S. N. ; Ryabova, L. I. ; Khokhlov, D. R.
Alternative Links zum Volltext:DOI
| Dokumentenart: | Artikel |
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| Titel eines Journals oder einer Zeitschrift: | Semiconductors |
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| Verlag: | MAIK NAUKA/INTERPERIODICA/SPRINGER |
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| Ort der Veröffentlichung: | NEW YORK |
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| Band: | 45 |
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| Nummer des Zeitschriftenheftes oder des Kapitels: | 11 |
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| Seitenbereich: | S. 1474-1478 |
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| Datum: | 2011 |
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| Institutionen: | Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev |
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| Identifikationsnummer: | | Wert | Typ |
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| 10.1134/S1063782611110091 | DOI |
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| Stichwörter / Keywords: | NANOCRYSTALLINE PBTE(IN) FILMS; ALTERNATING ELECTRIC-FIELD; PBS-TYPE FILMS; PHYSICAL-PROPERTIES; CONDUCTIVITY; SEMICONDUCTORS; TRANSPORT; |
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| Dewey-Dezimal-Klassifikation: | 500 Naturwissenschaften und Mathematik > 530 Physik |
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| Status: | Veröffentlicht |
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| Begutachtet: | Ja, diese Version wurde begutachtet |
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| An der Universität Regensburg entstanden: | Unbekannt / Keine Angabe |
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| Dokumenten-ID: | 27943 |
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Zusammenfassung
It is shown that the microstructure and features of formation of surface states in nanocrystalline and polycrystalline PbTe:In films most significantly affect the character of photoconductivity in the spectral range of 1-2.5 THz. We present the results of a study and comparative analysis of the character of conductivity of PbTe:In films in the temperature range from 4.2 to 300 K in a static mode ...
Zusammenfassung
It is shown that the microstructure and features of formation of surface states in nanocrystalline and polycrystalline PbTe:In films most significantly affect the character of photoconductivity in the spectral range of 1-2.5 THz. We present the results of a study and comparative analysis of the character of conductivity of PbTe:In films in the temperature range from 4.2 to 300 K in a static mode and in variable electric fields with a frequency of up to 1 MHz with illumination with white light and under the effect of high-power terahertz laser pulses with a wavelength of up to 280 mu m.
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