Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1-xAs quantum well structures

URN to cite this document:: urn:nbn:de:bvb:355-epub-279447
DOI to cite this document:: 10.5283/epub.27944

Lechner, V. ; Golub, Leonid E. ; Lomakina, F. ; Bel'kov, V. V. ; Olbrich, P. ; Stachel, S. ; Caspers, I. ; Griesbeck, M. ; Kugler, M. ; Hirmer, M. J. ; Korn, T. ; Schüller, C. ; Schuh, D. ; Wegscheider, W. ; Ganichev, Sergey

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Date of publication of this fulltext: 20 Mar 2013 11:19

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Abstract

We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most QW ...