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Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1-xAs quantum well structures

Lechner, V., Golub, Leonid E., Lomakina, F., Bel'kov, V.V., Olbrich, P., Stachel, S., Caspers, I., Griesbeck, M., Kugler, M., Hirmer, M.J., Korn, T., Schüller, C., Schuh, D., Wegscheider, W. and Ganichev, Sergey (2011) Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1-xAs quantum well structures. Physical Review B 83 (15), p. 155313.

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Abstract

We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most QW ...

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Item type:Article
Date:2011
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevB.83.155313DOI
Classification:
NotationType
73.21.Fg, 72.25.Fe, 78.67.De, 73.63.HsPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:27944
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