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Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN filmss

URN to cite this document:
urn:nbn:de:bvb:355-epub-280775
DOI to cite this document:
10.5283/epub.28077
Baturina, Tatyana ; Kalok, David ; Bilusic, Ante ; Vinokur, Valerii M. ; Baklanov, Mikhail R. ; Gutakovskii, A. K. ; Latyshev, A. V. ; Strunk, Christoph
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Date of publication of this fulltext: 23 Apr 2013 13:08


Abstract

We investigate transport properties of superconducting TiN films in the vicinity of the superconductor-insulator transition (SIT). We show that the current-voltage (I-V) characteristics are mirror-symmetric with respect to the SIT and can be switched to each other by the applied magnetic field. In both superconducting and insulating states, the low-temperature I-V characteristics have pronounced ...

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