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Spin-Hall transport of heavy holes in III-V semiconductor quantum wells

Schliemann, John and Loss, Daniel (2005) Spin-Hall transport of heavy holes in III-V semiconductor quantum wells. Phys. Rev. B 71, 085308.

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Date of publication of this fulltext: 22 May 2013 13:56

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.71.085308, http://prb.aps.org/pdf/PRB/v71/i8/e085308


Abstract

We investigate spin transport of heavy holes in III-V semiconductor quantum wells in the presence of spin-orbit coupling of the Rashba type due to structure-inversion asymmetry. Similarly to the case of electrons, the longitudinal spin conductivity vanishes, whereas the off-diagonal elements of the spin-conductivity tensor are finite giving rise to an intrinsic spin-Hall effect. For a clean ...

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Item type:Article
Date:9 February 2005
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann
Projects:NCCR, EU-Spintronics
Identification Number:
ValueType
10.1103/PhysRevB.71.085308DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Item ID:28235
Owner only: item control page

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