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Theory of spin relaxation in laterally coupled quantum dots

URN to cite this document:
Raith, Martin
Date of publication of this fulltext: 13 Sep 2013 14:45

Abstract (English)

This work gives a comprehensive quantitative analysis of the relaxation of electron spins confined in top-gated, laterally coupled semiconductor quantum dots. We choose the two most prominent host materials for the dot implementation, gallium arsenide and silicon, and compare the characteristics of both semiconductors to each other. The quantum dot that we consider is loaded with either a single ...


Translation of the abstract (German)

Die vorliegende Dissertation behandelt in umfassender Weise die Spinrelaxation von lokalisierten Elektronen lateral gekoppelter Halbleiterquantenpukte. Für die quantitativen Aussagen werden die beiden wichtigsten Materialien der Quantenpunktforschung, Galliumarsenid und Silizium, herangezogen und verglichen. Es werden sowohl der Spin eines einzelnen Elektrons als auch die Singulett- und ...


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