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Cross-sectional scanning probe microscopy on GaAs: Tip-induced band bending, buried acceptors and adsorbed molecules

Münnich, Gerhard (2014) Cross-sectional scanning probe microscopy on GaAs: Tip-induced band bending, buried acceptors and adsorbed molecules. PhD, Universität Regensburg.

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Date of publication of this fulltext: 30 Jun 2014 14:33

Abstract (English)

This thesis presents low temperature scanning probe experiments performed in the cross-sectional geometry (X-SPM) on GaAs samples. In particular, three topics have been addressed. First, the GaAs(110) surface has been utilized as a substrate to adsorb iron-II-phthalocyanine molecules. The molecules were probed from scanning tunneling microscopy (STM) and spectroscopy (STS) and were found to be ...


Translation of the abstract (German)

In dieser Dissertation wurden GaAs-Spaltflächen mittels Tieftemperatur-Rastersondenmikroskopie untersucht. Drei Themengebiete wurden bearbeitet. Erstens wurde die GaAs(110) Oberfläche als Substrat für adsorbierte Eisen-II-Phthalocyanin Moleküle verwendet. Die Moleküle wurden mittels Rastertunnelmikroskopie (STM) und Spektroskopie (STS) untersucht. Der Einfluss des Substrates auf die Moleküle ...


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Item type:Thesis of the University of Regensburg (PhD)
Date:30 June 2014
Referee:Prof. Dr. Jascha Repp
Date of exam:18 June 2014
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Jascha Repp
Keywords:cross-sectional scanning probe microscopy, scanning tunneling microscopy, atomic force microscopy, Kelvin probe force spectroscopy, tip-induced band bending, III-V semiconductor, GaAs, acceptor, iron-II-phthalocyanine molecule, gating
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:30107
Owner only: item control page


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