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Cross-sectional scanning probe microscopy on GaAs: Tip-induced band bending, buried acceptors and adsorbed molecules

URN to cite this document:
urn:nbn:de:bvb:355-epub-301077
Münnich, Gerhard
Date of publication of this fulltext: 30 Jun 2014 14:33


Abstract (English)

This thesis presents low temperature scanning probe experiments performed in the cross-sectional geometry (X-SPM) on GaAs samples. In particular, three topics have been addressed. First, the GaAs(110) surface has been utilized as a substrate to adsorb iron-II-phthalocyanine molecules. The molecules were probed from scanning tunneling microscopy (STM) and spectroscopy (STS) and were found to be ...

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Translation of the abstract (German)

In dieser Dissertation wurden GaAs-Spaltflächen mittels Tieftemperatur-Rastersondenmikroskopie untersucht. Drei Themengebiete wurden bearbeitet. Erstens wurde die GaAs(110) Oberfläche als Substrat für adsorbierte Eisen-II-Phthalocyanin Moleküle verwendet. Die Moleküle wurden mittels Rastertunnelmikroskopie (STM) und Spektroskopie (STS) untersucht. Der Einfluss des Substrates auf die Moleküle ...

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