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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-305326
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.30532
Zusammenfassung
The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two improved epitaxial designs are compared at different operating temperatures. In contrast to a simple ABC model, the proposed approach allows for ...
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