| PDF - Published Version (1MB) |
- URN to cite this document:
- urn:nbn:de:bvb:355-epub-308750
- DOI to cite this document:
- 10.5283/epub.30875
Abstract
We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that ...
Owner only: item control page