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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-309260
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.30926
Alternative Links zum Volltext:DOI
Zusammenfassung
We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ∼4×105 cm2/V⋅s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac ...
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