Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film

URN to cite this document:: urn:nbn:de:bvb:355-epub-309260
DOI to cite this document:: 10.5283/epub.30926

Kozlov, D. A. ; Kvon, Z. D. ; Olshanetsky, E. B. ; Mikhailov, N. N. ; Dvoretsky, S. A. ; Weiss, Dieter

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Date of publication of this fulltext: 04 Nov 2014 08:14

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Abstract

We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ∼4×105 cm2/V⋅s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac ...