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Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film

Kozlov, D. A., Kvon, Z. D., Olshanetsky, E. B., Mikhailov, N. N., Dvoretsky, S. A. and Weiss, Dieter (2014) Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film. Physical Review Letters (PRL) 112 (196801), pp. 1-5.

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Abstract

We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ∼4×105  cm2/V⋅s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac ...

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Item type:Article
Date:14 May 2014
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Identification Number:
ValueType
10.1103/PhysRevLett.112.196801DOI
Classification:
NotationType
73.25.+iPACS
05.60.GgPACS
73.20.AtPACS
73.43.-fPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:30926
Owner only: item control page

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