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Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film

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Kozlov, D. A. ; Kvon, Z. D. ; Olshanetsky, E. B. ; Mikhailov, N. N. ; Dvoretsky, S. A. ; Weiss, Dieter
Date of publication of this fulltext: 04 Nov 2014 08:14


We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ∼4×105  cm2/V⋅s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac ...


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