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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-309876
- DOI to cite this document:
- 10.5283/epub.30987
Abstract
The I−V characteristics of CoFeB/MgO/CoFeB magnetic tunnel junctions show pronounced nonlinearities which are relevant both for sensor applications and for the basic understanding of spin-dependent tunneling. To study the relation between the tunnel characteristics and the tunnel magnetoresistance (TMR) ratio, a series of CoFeB/MgO/CoFeB junctions was annealed with stepwise increasing annealing ...
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