| PDF - Veröffentlichte Version Article (296kB) | |
| PDF - Veröffentlichte Version Supplementary data (264kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-310322
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.31032
Zusammenfassung
We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags