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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-312121
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.31212
Alternative Links zum Volltext:DOI
Zusammenfassung
When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that ...
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