Spin dephasing and phtoinduced spin diffusion in a high-mobility two-dimensional electron system embedded in a GaAs-(Al,Fa)As quantum well grown in the [110] direction

URN to cite this document:: urn:nbn:de:bvb:355-epub-321553
DOI to cite this document:: 10.5283/epub.32155

Voelkl, Roland ; Griesbeck, Michael ; Tarasenko, Sergey ; Schuh, Dieter ; Wegscheider, Werner ; Schueller, Christian ; Korn, Tobias

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Date of publication of this fulltext: 16 Jul 2015 14:22

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Abstract

We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: The optical ...