Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

URN to cite this document:: urn:nbn:de:bvb:355-epub-333674
DOI to cite this document:: 10.5283/epub.33367

Hubmann, Joachim ; Bauer, Benedikt ; Körner, H. S. ; Furthmeier, Stephan ; Buchner, Martin ; Bayreuther, Günther ; Dirnberger, D. ; Schuh, Dieter ; Back, Christian

; Zweck, Josef ; Reiger, Elisabeth ; Bougeard, Dominique

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Date of publication of this fulltext: 23 Feb 2016 14:50

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Abstract

We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This ...