Go to content
UR Home

Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

URN to cite this document:
DOI to cite this document:
Tóvári, Endre ; Makk, Péter ; Liu, Ming-Hao ; Rickhaus, Peter ; Kovács-Krausz, Zoltán ; Richter, Klaus ; Schönenberger, Christian ; Csonka, Szabolcs
License: Creative Commons: Attribution 3.0
PDF - Published Version
PDF - Submitted Version
arXiv PDF (26.06.2016)
Date of publication of this fulltext: 29 Jun 2016 11:14


The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons