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Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

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DOI to cite this document:
Tóvári, Endre ; Makk, Péter ; Liu, Ming-Hao ; Rickhaus, Peter ; Kovács-Krausz, Zoltán ; Richter, Klaus ; Schönenberger, Christian ; Csonka, Szabolcs
License: Creative Commons Attribution 3.0
PDF - Published Version
PDF - Submitted Version
arXiv PDF (26.06.2016)
Date of publication of this fulltext: 29 Jun 2016 11:14


The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are ...


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