Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

URN to cite this document:: urn:nbn:de:bvb:355-epub-339672
DOI to cite this document:: 10.5283/epub.33967

Tóvári, Endre ; Makk, Péter ; Liu, Ming-Hao ; Rickhaus, Peter ; Kovács-Krausz, Zoltán ; Richter, Klaus ; Schönenberger, Christian ; Csonka, Szabolcs

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Date of publication of this fulltext: 29 Jun 2016 11:14

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Abstract

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are ...