Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

URN to cite this document:: urn:nbn:de:bvb:355-epub-345803
DOI to cite this document:: 10.5283/epub.34580

Müller, K. ; Rosenauer, A. ; Schowalter, M. ; Zweck, Josef ; Fritz, R. ; Volz, K.

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Date of publication of this fulltext: 30 Sep 2016 08:48

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Abstract

This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very ...