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Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

Müller, K., Rosenauer, A., Schowalter, M., Zweck, Josef, Fritz, R. and Volz, K. (2012) Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy. Microscopy and Microanalysis 18, pp. 995-1009.

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Date of publication of this fulltext: 30 Sep 2016 08:48

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Abstract

This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very ...

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Item type:Article
Date:2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck
Identification Number:
ValueType
10.1017/S1431927612001274DOI
Keywords:strain measurement, electron diffraction, TEM, CBED, STEM, semiconductors
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:34580
Owner only: item control page

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