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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-348487
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.34848
Zusammenfassung
We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the ...
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