We compute analytically the weak (anti) localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc-blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions < 100 >, < 111 >, and < 110 >. The motion on the quasi-two-dimensional surface is considered diffusive in both directions: transversal as well as along the cylinder axis. It is shown that Dresselhaus and Rashba SOC similarly affect the spin relaxation rates. For the < 110 > growth direction, the long-lived spin states are of helical nature. We detect a crossover from weak localization to weak antilocalization depending on spin-orbit coupling strength as well as dephasing and scattering rate. The theory is fitted to experimental data of an undoped < 111 > InAs nanowire device which exhibits a top-gate-controlled crossover from positive to negative magnetoconductivity. Thereby, we extract transport parameters where we quantify the distinct types of SOC individually.