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Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

But, D. B., Drexler, C., Sakhno, M. V., Dyakonova, N., Drachenko, O., Sizov, F. F., Gutin, A., Ganichev, Sergey and Knap, W. (2014) Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities. Journal of Applied Physics 115 (16), p. 164514.

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Other URL: http://scitation.aip.org/content/aip/journal/jap/115/16/10.1063/1.4872031


Abstract

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm2 range. ...

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Item type:Article
Date:April 2014
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SPP 1459: Graphene, GRK 1570, Elektronische Eigenschaften von Nanostrukturen auf Kohlenstoff-Basis
Identification Number:
ValueType
10.1063/1.4872031DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:34924
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