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Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

But, D. B. ; Drexler, C. ; Sakhno, M. V. ; Dyakonova, N. ; Drachenko, O. ; Sizov, F. F. ; Gutin, A. ; Ganichev, Sergey ; Knap, W.


Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm2 range. ...


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