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Chen, Lin ; Decker, Martin ; Kronseder, Matthias ; Islinger, Robert ; Gmitra, Martin ; Schuh, Dieter ; Bougeard, Dominique ; Fabian, Jaroslav ; Weiss, Dieter ; Back, Christian

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

Chen, Lin , Decker, Martin, Kronseder, Matthias , Islinger, Robert, Gmitra, Martin , Schuh, Dieter, Bougeard, Dominique , Fabian, Jaroslav , Weiss, Dieter and Back, Christian (2016) Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature. Nature Communications 7, p. 13802.

Date of publication of this fulltext: 14 Dec 2016 09:02
Article
DOI to cite this document: 10.5283/epub.34980


Abstract

Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate-due ...

Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate-due to strong spin-orbit interaction-spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.



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Details

Item typeArticle
Journal or Publication TitleNature Communications
Publisher:Springer
Open Access Type:Due to SHERPA/RoMEO
Place of Publication:LONDON
Volume:7
Page Range:p. 13802
Date13 December 2016
InstitutionsPhysics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Chair Professor Back > Group Christian Back
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Identification Number
ValueType
10.1038/ncomms13802DOI
KeywordsFERROMAGNETIC-RESONANCE; HALL; CONVERSION; VOLTAGES; FIELD;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-349806
Item ID34980

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