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Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature
Chen, Lin
, Decker, Martin, Kronseder, Matthias
, Islinger, Robert, Gmitra, Martin
, Schuh, Dieter, Bougeard, Dominique
, Fabian, Jaroslav
, Weiss, Dieter
und Back, Christian
(2016)
Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature.
Nature Communications 7, S. 13802.
Veröffentlichungsdatum dieses Volltextes: 14 Dez 2016 09:02
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.34980
Zusammenfassung
Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate-due ...
Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate-due to strong spin-orbit interaction-spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.
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