| PDF (644kB) | |
| PDF (2MB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-350147
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.35014
Zusammenfassung
We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the inelastic activated regime occurring at higher temperatures, where electronic transport is dominated by phonon-assisted hops between localised states (Mott ...
![plus plus](/style/images/plus.png)
Nur für Besitzer und Autoren: Kontrollseite des Eintrags