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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-350147
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.35014
Zusammenfassung
We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the inelastic activated regime occurring at higher temperatures, where electronic transport is dominated by phonon-assisted hops between localised states (Mott ...
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