Ion-Beam-Induced Atomic Mixing in Ge, Si, and GeSi, Studied by Means of Isotope Multilayer Structures

URN zum Zitieren dieses Dokuments:: urn:nbn:de:bvb:355-epub-362579
DOI zum Zitieren dieses Dokuments:: 10.5283/epub.36257

Radek, Manuel ; Liedke, Bartosz ; Schmidt, Bernd ; Voelskow, Matthias ; Bischoff, Lothar ; Hansen, John Lundsgaard ; Larsen, Arne Nylandsted ; Bougeard, Dominique ; Böttger, Roman ; Prucnal, Slawomir ; Posselt, Matthias ; Bracht, Hartmut

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Zusammenfassung

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...