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Ion-Beam-Induced Atomic Mixing in Ge, Si, and GeSi, Studied by Means of Isotope Multilayer Structures

Radek, Manuel, Liedke, Bartosz, Schmidt, Bernd, Voelskow, Matthias, Bischoff, Lothar, Hansen, John Lundsgaard, Larsen, Arne Nylandsted, Bougeard, Dominique, Böttger, Roman, Prucnal, Slawomir, Posselt, Matthias and Bracht, Hartmut (2017) Ion-Beam-Induced Atomic Mixing in Ge, Si, and GeSi, Studied by Means of Isotope Multilayer Structures. Materials (MDPI) 10, p. 813.

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Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...


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Item type:Article
Date:17 July 2017
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
28773172PubMed ID
Keywords:MOLECULAR-DYNAMICS SIMULATIONS; AMORPHOUS-SILICON; DEFECT PRODUCTION; EPITAXIAL CRYSTALLIZATION; DISPLACEMENT CASCADES; THERMAL-CONDUCTIVITY; RADIATION-DAMAGE; IMPLANTATION; IRRADIATION; SEMICONDUCTORS; silicon; germanium; ion beam; atomic mixing; thermal spike; radiation enhanced diffusion; amorphization; recrystallization; molecular dynamics
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:36257
Owner only: item control page


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