Ion-Beam-Induced Atomic Mixing in Ge, Si, and GeSi, Studied by Means of Isotope Multilayer Structures

URN to cite this document:: urn:nbn:de:bvb:355-epub-362579
DOI to cite this document:: 10.5283/epub.36257

Radek, Manuel ; Liedke, Bartosz ; Schmidt, Bernd ; Voelskow, Matthias ; Bischoff, Lothar ; Hansen, John Lundsgaard ; Larsen, Arne Nylandsted ; Bougeard, Dominique ; Böttger, Roman ; Prucnal, Slawomir ; Posselt, Matthias ; Bracht, Hartmut

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Date of publication of this fulltext: 02 Nov 2017 14:56

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Abstract

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...