Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

URN to cite this document:: urn:nbn:de:bvb:355-epub-365055
DOI to cite this document:: 10.5283/epub.36505

Völkl, Tobias ; Rockinger, Tobias ; Drienovsky, Martin ; Watanabe, Kenji ; Taniguchi, Takashi ; Weiss, Dieter ; Eroms, Jonathan

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Date of publication of this fulltext: 17 Jan 2018 09:01

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Abstract

We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene/WSe2/SiO2 samples we observe mobilities of similar to 12 000 cm(2) V-1 s(-1). Magnetic-field-dependent resistance measurements on these ...