| Lizenz: Creative Commons Namensnennung 4.0 International PDF - Veröffentlichte Version (1MB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-365104
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.36510
Zusammenfassung
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle ...
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