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Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

URN to cite this document:
urn:nbn:de:bvb:355-epub-367191
DOI to cite this document:
10.5283/epub.36719
Steinleitner, Philipp ; Merkl, Philipp ; Graf, Alexander ; Nagler, Philipp ; Watanabe, Kenji ; Taniguchi, Takashi ; Zipfel, Jonas ; Schüller, Christian ; Korn, Tobias ; Chernikov, Alexey ; Brem, Samuel ; Selig, Malte ; Berghäuser, Gunnar ; Malic, Ermin ; Huber, Rupert
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Date of publication of this fulltext: 14 Feb 2018 15:33


Abstract

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer ...

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