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Steinleitner, Philipp ; Merkl, Philipp ; Graf, Alexander ; Nagler, Philipp ; Watanabe, Kenji ; Taniguchi, Takashi ; Zipfel, Jonas ; Schüller, Christian ; Korn, Tobias ; Chernikov, Alexey ; Brem, Samuel ; Selig, Malte ; Berghäuser, Gunnar ; Malic, Ermin ; Huber, Rupert

Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

Steinleitner, Philipp, Merkl, Philipp, Graf, Alexander, Nagler, Philipp, Watanabe, Kenji , Taniguchi, Takashi, Zipfel, Jonas, Schüller, Christian, Korn, Tobias , Chernikov, Alexey, Brem, Samuel, Selig, Malte, Berghäuser, Gunnar, Malic, Ermin and Huber, Rupert (2018) Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure. Nano Letters 18 (2), pp. 1402-1409.

Date of publication of this fulltext: 14 Feb 2018 15:33
Article
DOI to cite this document: 10.5283/epub.36719


Abstract

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer ...

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of is A excitons. This approach allows us to trace the energies and line widths of the atom-like 1s-2p transition of optically bright and dark excitons as well as the densities of these quasiparticles. The excitonic resonance red shifts and narrows in the WSe2/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of nonlocal screening on electron hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.



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    Steinleitner, Philipp, Merkl, Philipp, Graf, Alexander, Nagler, Philipp, Watanabe, Kenji , Taniguchi, Takashi, Zipfel, Jonas, Schüller, Christian, Korn, Tobias , Chernikov, Alexey, Brem, Samuel, Selig, Malte, Berghäuser, Gunnar, Malic, Ermin and Huber, Rupert (2018) Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure. Nano Letters 18 (2), pp. 1402-1409. [Currently displayed]

Details

Item typeArticle
Journal or Publication TitleNano Letters
Publisher:AMER CHEMICAL SOC
Place of Publication:WASHINGTON
Volume:18
Number of Issue or Book Chapter:2
Page Range:pp. 1402-1409
Date24 January 2018
InstitutionsPhysics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Identification Number
ValueType
10.1021/acs.nanolett.7b05132DOI
KeywordsMETAL DICHALCOGENIDE HETEROSTRUCTURES; LIGHT-EMITTING-DIODES; P-N-JUNCTIONS; MONOLAYER WSE2; 2-DIMENSIONAL MATERIALS; SEMICONDUCTOR; SPECTROSCOPY; EXCITONS; MOS2/WS2; LAYER; Dichalcogenides; atomically thin 2D crystals; van der Waals heterostructures; dielectric engineering; dark excitons
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-367191
Item ID36719

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