Go to content
UR Home

Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

URN to cite this document:
urn:nbn:de:bvb:355-epub-367191
DOI to cite this document:
10.5283/epub.36719
Steinleitner, Philipp ; Merkl, Philipp ; Graf, Alexander ; Nagler, Philipp ; Watanabe, Kenji ; Taniguchi, Takashi ; Zipfel, Jonas ; Schüller, Christian ; Korn, Tobias ; Chernikov, Alexey ; Brem, Samuel ; Selig, Malte ; Berghäuser, Gunnar ; Malic, Ermin ; Huber, Rupert
[img]
Preview
PDF
(2MB)
Date of publication of this fulltext: 14 Feb 2018 15:33


Abstract

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons