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Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure
Steinleitner, Philipp, Merkl, Philipp, Graf, Alexander, Nagler, Philipp, Watanabe, Kenji
, Taniguchi, Takashi, Zipfel, Jonas, Schüller, Christian, Korn, Tobias
, Chernikov, Alexey, Brem, Samuel, Selig, Malte, Berghäuser, Gunnar, Malic, Ermin and Huber, Rupert
(2018)
Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure.
Nano Letters 18 (2), pp. 1402-1409.
Date of publication of this fulltext: 14 Feb 2018 15:33
Article
DOI to cite this document: 10.5283/epub.36719
Abstract
Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer ...
Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of is A excitons. This approach allows us to trace the energies and line widths of the atom-like 1s-2p transition of optically bright and dark excitons as well as the densities of these quasiparticles. The excitonic resonance red shifts and narrows in the WSe2/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of nonlocal screening on electron hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.
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Steinleitner, Philipp, Merkl, Philipp, Graf, Alexander, Nagler, Philipp, Watanabe, KenjiPreview
, Taniguchi, Takashi, Zipfel, Jonas, Schüller, Christian, Korn, Tobias
, Chernikov, Alexey, Brem, Samuel, Selig, Malte, Berghäuser, Gunnar, Malic, Ermin and Huber, Rupert
(2018)
Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure.
Nano Letters 18 (2), pp. 1402-1409.
[Currently displayed]-
Steinleitner, Philipp
, Merkl, Philipp, Graf, Alexander, Nagler, Philipp, Wantanabe, Kenji, Taniguchi, Takashi, Zipfel, Jonas, Schüller, Christian
, Korn, Tobias
, Chernikov, Alexey, Huber, Rupert
, Brem, Samuel
, Selig, Malte, Berghäuser, Gunnar and Malic, Ermin
(2018)
Data archive of "Dielectric engineering of electronic correlations in a van der Waals heterostructure".
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Details
| Item type | Article | ||||
| Journal or Publication Title | Nano Letters | ||||
| Publisher: | AMER CHEMICAL SOC | ||||
|---|---|---|---|---|---|
| Place of Publication: | WASHINGTON | ||||
| Volume: | 18 | ||||
| Number of Issue or Book Chapter: | 2 | ||||
| Page Range: | pp. 1402-1409 | ||||
| Date | 24 January 2018 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller | ||||
| Identification Number |
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| Keywords | METAL DICHALCOGENIDE HETEROSTRUCTURES; LIGHT-EMITTING-DIODES; P-N-JUNCTIONS; MONOLAYER WSE2; 2-DIMENSIONAL MATERIALS; SEMICONDUCTOR; SPECTROSCOPY; EXCITONS; MOS2/WS2; LAYER; Dichalcogenides; atomically thin 2D crystals; van der Waals heterostructures; dielectric engineering; dark excitons | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-367191 | ||||
| Item ID | 36719 |
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