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Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

Steinleitner, Philipp , Merkl, Philipp, Graf, Alexander, Nagler, Philipp, Watanabe, Kenji , Taniguchi, Takashi, Zipfel, Jonas, Schüller, Christian, Korn, Tobias , Chernikov, Alexey, Brem, Samuel , Selig, Malte , Berghäuser, Gunnar, Malic, Ermin and Huber, Rupert (2018) Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure. Nano Letters 18 (2), pp. 1402-1409.

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Abstract

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer ...

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Item type:Article
Date:24 January 2018
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Projects:ERC grant 305003 QuantumsubCycle, SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität, GRK 1570, Elektronische Eigenschaften von Nanostrukturen auf Kohlenstoff-Basis
Identification Number:
ValueType
10.1021/acs.nanolett.7b05132DOI
Keywords:Dichalcogenides, atomically thin 2D crystals, van der Waals heterostructures, dielectric engineering, dark excitons
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:36719
Owner only: item control page

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