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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-398673
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.39867
Zusammenfassung
We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that ...
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