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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-400433
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.40043
Zusammenfassung
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. Published by AIP Publishing.
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