Glazov, Mikhail M. ; Chernikov, Alexey
Alternative Links zum Volltext:DOIVerlag
| Dokumentenart: | Artikel |
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| Titel eines Journals oder einer Zeitschrift: | physica status solidi (b) |
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| Verlag: | Wiley |
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| Ort der Veröffentlichung: | WEINHEIM |
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| Band: | 255 |
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| Nummer des Zeitschriftenheftes oder des Kapitels: | 12 |
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| Seitenbereich: | S. 1800216 |
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| Datum: | 2018 |
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| Institutionen: | Nicht ausgewählt |
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| Identifikationsnummer: | | Wert | Typ |
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| 10.1002/pssb.201800216 | DOI |
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| Stichwörter / Keywords: | ELECTRONIC-PROPERTIES; TRIONS; excitons; free-carrier screening; transition-metal dichalcogenides; two-dimensional semiconductors |
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| Dewey-Dezimal-Klassifikation: | 500 Naturwissenschaften und Mathematik > 530 Physik |
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| Status: | Veröffentlicht |
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| Begutachtet: | Ja, diese Version wurde begutachtet |
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| An der Universität Regensburg entstanden: | Zum Teil |
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| Dokumenten-ID: | 40521 |
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Zusammenfassung
The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier ...
Zusammenfassung
The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.
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