Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy
Titova, Lyubov V., Cocker, Tyler L., Xu, Sijia, Baribeau, Jean-Marc, Wu, Xiaohua, Lockwood, David J. and Hegmann, Frank A. (2016) Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy. Semiconductor Science and Technology 31 (10), p. 105017.Date of publication of this fulltext: 17 Mar 2020 12:08
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| Item type | Article | ||||
| Journal or Publication Title | Semiconductor Science and Technology | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
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| Place of Publication: | BRISTOL | ||||
| Volume: | 31 | ||||
| Number of Issue or Book Chapter: | 10 | ||||
| Page Range: | p. 105017 | ||||
| Date | 2016 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber | ||||
| Identification Number |
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| Keywords | RESOLVED TERAHERTZ SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; TEMPERATURE SI GROWTH; AMORPHOUS-SILICON; LIMITING THICKNESS; NANOCRYSTAL FILMS; ON-SAPPHIRE; CONDUCTIVITY; SI(100); RECOMBINATION; silicon thin films; terahertz spectroscopy; grain boundaries; low-temperature MBE; carrier dynamics | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 42970 |
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