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Symmetry breaking and circular photogalvanic effect in epitaxial CdxHg1-xTe films
Hubmann, Stefan, Budkin, G. V.
, Otteneder, M., But, D.
, Sacré, Daniel
, Yahniuk, I., Diendorfer, K
, Bel'kov, V. V., Kozlov, D. A., Mikhailov, N. N., Dvoretsky, S. A., Varavin, V. S.
, Remesnik, V. G., Tarasenko, S. A., Knap, W. und Ganichev, Sergey
(2020)
Symmetry breaking and circular photogalvanic effect in epitaxial CdxHg1-xTe films.
Phys. Rev. Materials 4, 043607.
Veröffentlichungsdatum dieses Volltextes: 20 Aug 2020 05:16
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.43603
Zusammenfassung
We report on the observation of symmetry breaking and the circular photogalvanic effect in CdxHg1-xTe alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende ...
We report on the observation of symmetry breaking and the circular photogalvanic effect in CdxHg1-xTe alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments; therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with noninverted band structure. We suggest that strain is a reason for the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.
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| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Phys. Rev. Materials | ||||
| Verlag: | AMER PHYSICAL SOC | ||||
|---|---|---|---|---|---|
| Ort der Veröffentlichung: | COLLEGE PK | ||||
| Band: | 4 | ||||
| Seitenbereich: | 043607 | ||||
| Datum | 28 April 2020 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev | ||||
| Identifikationsnummer |
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| Stichwörter / Keywords | MOLECULAR-BEAM EPITAXY; SEMICONDUCTORS; FERMIONS; STATES; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Ja | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-436032 | ||||
| Dokumenten-ID | 43603 |
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