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Symmetry breaking and circular photogalvanic effect in epitaxial CdxHg1-xTe films
Hubmann, Stefan, Budkin, G. V.
, Otteneder, M., But, D.
, Sacré, Daniel
, Yahniuk, I., Diendorfer, K
, Bel'kov, V. V., Kozlov, D. A., Mikhailov, N. N., Dvoretsky, S. A., Varavin, V. S.
, Remesnik, V. G., Tarasenko, S. A., Knap, W. and Ganichev, Sergey
(2020)
Symmetry breaking and circular photogalvanic effect in epitaxial CdxHg1-xTe films.
Phys. Rev. Materials 4, 043607.
Date of publication of this fulltext: 20 Aug 2020 05:16
Article
DOI to cite this document: 10.5283/epub.43603
Abstract
We report on the observation of symmetry breaking and the circular photogalvanic effect in CdxHg1-xTe alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende ...
We report on the observation of symmetry breaking and the circular photogalvanic effect in CdxHg1-xTe alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments; therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with noninverted band structure. We suggest that strain is a reason for the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.
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Details
| Item type | Article | ||||
| Journal or Publication Title | Phys. Rev. Materials | ||||
| Publisher: | AMER PHYSICAL SOC | ||||
|---|---|---|---|---|---|
| Open Access Type: | Due to SHERPA/RoMEO | ||||
| Place of Publication: | COLLEGE PK | ||||
| Volume: | 4 | ||||
| Page Range: | 043607 | ||||
| Date | 28 April 2020 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | MOLECULAR-BEAM EPITAXY; SEMICONDUCTORS; FERMIONS; STATES; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-436032 | ||||
| Item ID | 43603 |
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