Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

URN to cite this document:: urn:nbn:de:bvb:355-epub-442554
DOI to cite this document:: 10.5283/epub.44255

Zollner, Klaus

; Cummings, Aron W.

; Roche, Stephan ; Fabian, Jaroslav

Preview

PDF
(7MB)

Preview

PDF
(2MB)

Anderes
(72kB)

Date of publication of this fulltext: 03 Dec 2020 06:19

Alternative links to fulltext:Arxiv DOI

Linked items

Details

Preview

Indexed in

Export bibliographical data

Abstract

We investigate the electronic band structure of graphene on a series of two-dimensional hexagonal nitride insulators hXN, X = B, A1, and Ga, with first-principles calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of the proximitized graphene. While commensurate hBN induces a staggered potential ...

Owner only: item control page

Download Statistics

Altmetric

Alternative Statistics (altmetrics)

More literature (via CORE)

Linked items

Details

Preview

Preview

Indexed in

Export bibliographical data

Abstract

Abstract

Download Statistics

Downloads

Alternative Statistics (altmetrics)

More literature (via CORE)

University Library