Go to content
UR Home

Transport properties of band engineered p−n heterostructures of epitaxial Bi2Se3/(Bi1−xSbx)2(Te1−ySey)3 topological insulators

URN to cite this document:
DOI to cite this document:
Mayer, Thomas ; Werner, Heiko ; Diaz-Pardo, R. ; Fujii, J. ; Vobornik, I. ; Back, Christian H. ; Kronseder, Matthias ; Bougeard, Dominique
PDF - Published Version
Date of publication of this fulltext: 01 Mar 2021 10:04


The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy. Here, we present a heterostructure approach for epitaxial (Bi1-xSbx)(2)(Te1-ySey)(3) (BSTS) growth. A thin n-type Bi2Se3 (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons