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Transport properties of band engineered p−n heterostructures of epitaxial Bi2Se3/(Bi1−xSbx)2(Te1−ySey)3 topological insulators

URN to cite this document:
urn:nbn:de:bvb:355-epub-450426
DOI to cite this document:
10.5283/epub.45042
Mayer, Thomas ; Werner, Heiko ; Diaz-Pardo, R. ; Fujii, J. ; Vobornik, I. ; Back, Christian ; Kronseder, Matthias ; Bougeard, Dominique
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Date of publication of this fulltext: 01 Mar 2021 10:04


Abstract

The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy. Here, we present a heterostructure approach for epitaxial (Bi1−xSbx)2(Te1−ySey)3 (BSTS) growth. A thin n-type Bi2Se3 (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and ...

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