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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-450426
- DOI to cite this document:
- 10.5283/epub.45042
Abstract
The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy. Here, we present a heterostructure approach for epitaxial (Bi1-xSbx)(2)(Te1-ySey)(3) (BSTS) growth. A thin n-type Bi2Se3 (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and ...
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