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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-459820
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.45982
Zusammenfassung
We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field, the temperature-dependent resistance R(T) saturates at a finite resistance toward low temperatures, which results from quantum phase slips in the narrower strips. We find that the current-voltage (I-V) characteristics of the narrowest strips are equivalent to those of small ...
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