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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-461955
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.46195
Zusammenfassung
We introduce Sb2Si2Te6 as a high-performance thermoelectric material. Single-crystal X-ray diffraction analysis indicates that Sb2Si2Te6 has a layered two-dimensional structure with Sb3+ cations and [Si2Te6](6) units as building blocks adopting the Fe2P2Se6 structure type. Sb2Si2Te6 is a direct-band-gap semiconductor with valence-band maximum and conduction-band minimum at the Z point in the ...
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