Zusammenfassung
We discuss the behaviour of a quantum Hall system when two Landau levels with opposite spin and combined filling factor near unity are brought into energetic coincidence using an in-plane component of magnetic field. We focus on the interpretation of recent experiments under these conditions (Phys. Rev. Lett. 86 (2001) 866; Phys. Rev. B 64 (2001) 121305), in which a large resistance anisotropy ...
Zusammenfassung
We discuss the behaviour of a quantum Hall system when two Landau levels with opposite spin and combined filling factor near unity are brought into energetic coincidence using an in-plane component of magnetic field. We focus on the interpretation of recent experiments under these conditions (Phys. Rev. Lett. 86 (2001) 866; Phys. Rev. B 64 (2001) 121305), in which a large resistance anisotropy develops at low temperatures. Modelling the systems involved as Ising quantum Hall ferromagnets, we suggest that this transport anisotropy reflects domain formation induced by a random field arising from isotropic sample surface roughness.
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