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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-463825
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.46382
Zusammenfassung
Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 ...
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