Abstract
Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)(2)SO4. The compound is monoclinic (C2/m, a = 14.1659(4) angstrom, b = 4.2344(1) angstrom, c = 8.2100(2) angstrom, beta = 106.7201(8)degrees, V = 471.65(2) angstrom(3)) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln(2)O(2)SO(4). Upon heating, it ...
Abstract
Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)(2)SO4. The compound is monoclinic (C2/m, a = 14.1659(4) angstrom, b = 4.2344(1) angstrom, c = 8.2100(2) angstrom, beta = 106.7201(8)degrees, V = 471.65(2) angstrom(3)) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln(2)O(2)SO(4). Upon heating, it decomposes at similar to 550 degrees C into the Bi28O32(SO4)(10) which is stable until similar to 775 degrees C. DFT calculations predict it to be a wide-gap semiconductor.
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