Charge quenching at defect states in transition metal dichalcogenide–graphene van der Waals heterobilayers

URN to cite this document:: urn:nbn:de:bvb:355-epub-543829
DOI to cite this document:: 10.5283/epub.54382

Hernangómez-Pérez, Daniel

; Donarini, Andrea

; Refaely-Abramson, Sivan

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Date of publication of this fulltext: 19 Jun 2023 10:40

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Abstract

We study the dynamical properties of pointlike defects, represented by monoatomic chalcogen vacancies, in WS2–graphene and MoS2–graphene heterobilayers. Employing a multidisciplinary approach based on the combination of ab initio, model Hamiltonian and density matrix techniques, we propose a minimal interacting model that allows for the calculation of electronic transition times associated to ...