Data archive of "Charge quenching at defect states in transition metal dichalcogenide–graphene van derWaals heterobilayers"

Name: Data archive of "Charge quenching at defect states in transition metal dichalcogenide–graphene van derWaals heterobilayers"
Published: 2023
Keywords: DefectsSpin-orbit coupling, Transport phenomena, 2-dimensional systems, Graphene, Transition metal dichalcogenides, Density functional theory, Density matrix methods, Discrete symmetries in condensed matter, First-principles calculations, Many-body techniques, Quantum master equation, Tight-binding model, 530 Physics

URN to cite this document:: urn:nbn:de:bvb:355-epub-543837
DOI to cite this document:: 10.5283/epub.54383

Hernangómez-Pérez, Daniel

; Donarini, Andrea

; Refaely-Abramson, Sivan

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(141MB)

Date of publication of this fulltext: 19 Jun 2023 08:19

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Item type:	Dataset
Open Access Type:	Primary Publication
Date:	2023
Institutions:	Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni
Projects (Historical):	SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität
Keywords:	DefectsSpin-orbit coupling, Transport phenomena, 2-dimensional systems, Graphene, Transition metal dichalcogenides, Density functional theory, Density matrix methods, Discrete symmetries in condensed matter, First-principles calculations, Many-body techniques, Quantum master equation, Tight-binding model
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Unpublished
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Partially
Item ID:	54383

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Abstract

Abstract zur Publikation: We study the dynamical properties of pointlike defects, represented by monoatomic chalcogen vacancies, in WS2–graphene and MoS2–graphene heterobilayers. Employing a multidisciplinary approach based on the combination of ab initio, model Hamiltonian and density matrix techniques, we propose a minimal interacting model that allows for the calculation of electronic ...