Abstract
A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of d = 14 nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with d =18-22 nm having the same orientation, but here the impurity scattering of both electrons and holes is much more pronounced. The electron cyclotron ...
Abstract
A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of d = 14 nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with d =18-22 nm having the same orientation, but here the impurity scattering of both electrons and holes is much more pronounced. The electron cyclotron photoresistance is measured as a function of the electron density (N-s) and it is shown that the amplitude of the electron cyclotron photoresistance decreases with decreasing density, and the electron cyclotron photoresistance is not detected at N-s < 5 x 10(9) cm(-2). Thus, the two-dimensional semimetal under study does not exhibit the N-s-independent electron cyclotron photoresistance, which was earlier observed in the two-dimensional semimetal arising near the (100) surface. This is assumingly due to a significantly lower (by more than an order of magnitude) electron mobility in the system under study.